AO4606 Complementary Enhancement Mode Field Effect Transistor

General Description
The AO4606 uses advanced trench technology MOSFETs to provide excellentRDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features
n-channel p-channel
VDS (V) = 30V -30V
ID = 6.9A -6A
RDS(ON) RDS(ON) 
< 28mΩ (VGS=10V) < 35mΩ (VGS = 10V)
< 42mΩ (VGS=4.5V) < 58mΩ (VGS = 4.5V)