N-Channel Enhancement Mode MOSFET

Features 
 •     20V/6A , RDS(ON)=28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V
 •     Super High Dense Cell Design for Extremely Low RDS(ON)
 •     Reliable and Rugged
 •     SO-8 and TSSOP-8 Packages

Applications

•    Power Management in Notebook Computer ,
       Portable Equipment and Battery Powered
       Systems.