isc Silicon NPN RF Transistor                   
DESCRIPTION                                               
·Low Noise and High Gain 
NF = 1.1 dB TYP., Ga = 11 dB TYP. 
@VCE = 10 V, IC = 7 mA, f = 1.0 GHz 
·High Power Gain 
MAG = 13 dB TYP.  
@VCE = 10 V, IC = 20 mA, f = 1.0 GHz 
APPLICATIONS 
·Designed for low noise amplifier at VHF, UHF and CATV band.