AOD609 Complementary Enhancement Mode Field Effect Transistor

General Description
 The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Features
n-channel                        
VDS (V) = 40V, ID = 12A (VGS=10V)        
RDS(ON)< 30mΩ (VGS=10V) 
RDS(ON)< 40mΩ  (VGS=4.5V)
p-channel
VDS (V) = -40V, ID = -12A (VGS=-10V)
RDS(ON)< 45mΩ (VGS= -10V) 
RDS(ON)< 66mΩ(VGS= -4.5V)                                                 
                          100% UIS Tested!
                          100%  Rg Tested!