BFU550 NPN wideband silicon RF transistor

 General description
 NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual emitter SOT143B package. The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
  Features and benefits
 • Low noise, high breakdown RF transistor
 • AEC-Q101 qualified
 • Minimum noise figure (NFmin) = 0.7 dB at 900 MHz
 • Maximum stable gain 21 dB at 900 MHz
 • 11 GHz fT silicon technology
  Applications
 • Applications requiring high supply voltages and high breakdown voltages
 • Broadband amplifiers up to 2 GHz
 • Low noise amplifiers for ISM applications
 • ISM band oscillators